Third Order Band Pass Filter With Double-Gate MOSFET: A Simulation Perspective
نویسندگان
چکیده
منابع مشابه
The Band Pass Filter
The `ideal' band pass ̄lter can be used to isolate the component of a time series that lies within a particular band of frequencies. However, applying this ̄lter requires a dataset of in ̄nite length. In practice, some sort of approximation is needed. Using projections, we derive approximations that are optimal when the time series representations underlying the raw data have a unit root, or are...
متن کاملNovel OTA-C Current-Mode Third-Order Band- Pass Filters
In this paper, a general two-admittance current-mode circuit structure using Dual-Output OTA (DO-OTA) is explored to derive new third-order unsymmetrical band-pass filters. The proposed circuits are attractive as they require less number of OTAs and use only grounded capacitors. The other advantageous features offered by proposed filters are ease of design, good sensitivity and orthogonal tunab...
متن کاملCurrent-Mode Sixth-Order Elliptic Band-Pass Filter Using MCDTAs
In this paper, a modified CDTA(MCDTA) is presented and the current-mode second-order band-pass, high-pass notch, and low-pass notch circuits using MCDTAs are given. Moreover, a current-mode sixth-order elliptic band-pass filter is realized by means of cascade method. Having used six MCDTAs, one CDTA, six grounded capacitors and two resistors, the circuit is easy to be integrated, of which the p...
متن کاملUWB Band Pass Filter with WLAN notch
In this paper, UWB technology operating in broad frequency range of 3.1-10.6 GHz has shown great achievement for highspeed wireless communications. to satisfy the UWB system requirements, a band pass filter with a broad pass band width, low insertion loss, and high stop-band suppression. UWB band-pass filter (BPF) with wireless local area network (WLAN) notch at 5.8 GHz and 3-dB fractional band...
متن کاملSymmetric and Asymmetric Double Gate MOSFET Modeling
An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IOP Conference Series: Materials Science and Engineering
سال: 2021
ISSN: 1757-8981,1757-899X
DOI: 10.1088/1757-899x/1126/1/012019